It is described in this paper that the cut-off wave length of PtSi Schottky infrared detector can be extended to long wave-length infrared region by doping process of setting a thin spike with high doping concentration. 通过使用分子束外延(MBE)生长技术在PtSi/Si界面上加进一足够薄的高掺杂浓度峰(P+),可使PtSi肖特基红外探测器的截止波长延伸至长波红外范围。
The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression. LDMOS电流特性的研究涉及了器件电流线性区、夹断饱和区和准饱和区,并给出了简化的电流特性解析表达式。